CMPDM203NH

CMPDM203NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM203NH is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 203C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Low rDS(ON) (0.07Ω MAX @ VGS=2.5V) • High current (ID=3.2A) • Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 20 12 3.2 12.8 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=20V, VGS=0 VGS=0, ID=250μA VGS=VDS, VGS=4.5V, ID=250μA ID=1.6A 20 0.6 0.033 0.046 10.5 44 395 97 6.8 0.8 0.9 6.0 22.8 MAX 10 1.0 1.2 0.05 0.07 UNITS μA μA V V Ω Ω S pF pF pF VGS=2.5V, ID=1.6A VDS=5.0V, ID=3.2A VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDD=10V, VGS=4.5V, ID=3.2A VDD=10V, VDD=10V, VGS=4.5V, VGS=4.5V, ID=3.2A ID=3.2A 10 1.2 1.1 nC nC nC ns ns VDD=10V, ID=3.2A, RG=10Ω VDD=10V, ID=3.2A, RG=10Ω R0 (20-October 2010) CMPDM203NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 203C R0 (20-October 2010) w w w. c e n t r a l s e m i . c o m