CMPDM302PH

CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM302PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 302C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Low rDS(ON) (0.129Ω MAX @ VGS=2.5V) • High current (ID=2.4A) • Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 12 2.4 9.6 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=20V, VGS=0 VGS=0, ID=250μA VGS=VDS, ID=250μA VGS=4.5V, ID=1.2A VGS=2.5V, ID=1.2A VDS=5.0V, ID=2.4A VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDD=10V, VGS=5.0V, ID=2.4A VDD=10V, VGS=5.0V, ID=2.4A VDD=10V, VGS=5.0V, ID=2.4A VDD=10V, ID=2.4A, RG=10Ω VDD=10V, ID=2.4A, RG=10Ω 30 0.7 0.061 0.086 13.2 46 398 82 6.4 2.8 1.7 16.3 12.9 MAX 100 1.0 1.4 0.091 0.129 UNITS nA μA V V Ω Ω S pF pF pF 9.6 4.2 2.6 nC nC nC ns ns R0 (21-October 2010) CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 302C R0 (21-October 2010) w w w. c e n t r a l s e m i . c o m