CMPDM7002A CMPDM7002AG* SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A and CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special devices offer low rDS(ON) and low VDS (ON). MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G
SOT-23 CASE
* Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN
60 60 40 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.0 500
UNITS V V V mA mA A A mW °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω mS pF pF pF ns
ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=60V, VGS=0 IDSS VDS=60V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=400mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125°C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C gFS VDS=10V, ID=200mA Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz ton, toff VDD=30V, VGS=10V, ID=200mA, RG=25Ω, RL=150Ω
500 60 1.0
2.5 1.0 0.15 1.2 2.0 3.5 3.0 5.0 5.0 50 25 20
80
R4 (27-January 2010)
CMPDM7002A CMPDM7002AG* SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G
* Device is Halogen Free by design
R4 (27-January 2010)
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