CMPDM7120G

CMPDM7120G SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7120G is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE: C71G SOT-23 CASE • Device is Halogen Free by design APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • ESD protection up to 2kV • Low rDS(ON) (0.25Ω MAX @ VGS=1.5V) • High current (ID=1.0A) • Logic level compatibility • Small SOT-23 package SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA UNITS V V A A mW °C °C/W 20 8.0 1.0 4.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS VGS=0, ID=250μA 20 VGS(th) VDS=10V, ID=1.0mA 0.5 VSD VGS=0, IS=1.0A rDS(ON) VGS=4.5V, ID=0.5A 0.075 rDS(ON) VGS=2.5V, ID=0.5A 0.10 rDS(ON) gFS Crss Ciss Coss ton toff VGS=1.5V, ID=0.1A VDS=10V, ID=0.5A VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDD=10V, VGS=5.0V, ID=0.5A VDD=10V, VGS=5.0V, ID=0.5A 0.17 4.2 45 220 120 25 140 MAX 10 10 1.2 1.1 0.10 0.14 0.25 UNITS μA μA V V V Ω Ω Ω S pF pF pF ns ns R1 (27-January 2010) CMPDM7120G SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C71G R1 (27-January 2010) w w w. c e n t r a l s e m i . c o m