CMPDM8002A

CMPDM8002A

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMPDM8002A - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMPDM8002A 数据手册
CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802A FEATURES: • Low rDS(ON) • Low VDS(ON) • Low threshold voltage • Fast switching • Logic level compatibility SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.0 500 UNITS V V V mA mA A A mW °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω SOT-23 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=50V, VGS=0 IDSS VDS=50V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=115mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125°C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C 500 50 1.0 2.5 1.5 0.15 1.3 2.5 4.0 3.0 5.0 R1 (27-January 2010) CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET ELECTRICAL SYMBOL gFS Crss Ciss Coss ton, toff CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VDS =10V, ID=200mA 200 VDS=25V, VGS=0, f=1.0MHz 7.0 VDS=25V, VGS=0, f=1.0MHz 70 VDS=25V, VGS=0, f=1.0MHz 15 VDD=30V, VGS=10V, ID=200mA, RG=25Ω, RL=150Ω 20 UNITS mS pF pF pF ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C802A R1 (27-January 2010) w w w. c e n t r a l s e m i . c o m
CMPDM8002A
物料型号: - 型号:CMPDM8002A

器件简介: - CMPDM8002A是一款由CENTRAL SEMICONDUCTOR生产的表面贴装P沟道增强型硅MOSFET,采用P沟道DMOS工艺制造,设计用于高速脉冲放大器和驱动应用。

引脚分配: - 引脚1:栅极(Gate) - 引脚2:源极(Source) - 引脚3:漏极(Drain)

参数特性: - 低漏源电阻(rDS(ON)) - 低漏源电压(VDS(ON)) - 低阈值电压 - 快速开关特性 - 逻辑电平兼容性

功能详解: - 该器件适用于负载/电源开关、电源转换电路、电池供电的便携设备等应用。

应用信息: - 适用于负载/电源开关、电源供应转换电路、电池供电的便携设备等。

封装信息: - 封装类型:SOT-23 - 尺寸参数详细列出了SOT-23封装的各个尺寸,以英寸和毫米为单位。
CMPDM8002A 价格&库存

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