CMPDM8120

CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE: C8120 SOT-23 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t ≤ 5.0s Continuous Source Current (Body Diode) Maximum Pulsed Drain Current, tp=10μs Maximum Pulsed Source Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Low rDS(ON) • Low threshold voltage • Logic level compatibility • Small SOT-23 package SYMBOL VDS VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 20 8.0 860 950 360 4.0 4.0 350 -65 to +150 357 MAX 50 500 1.0 0.9 150 142 200 240 UNITS V V mA mA mA A A mW °C °C/W UNITS nA nA V V V mΩ mΩ mΩ mΩ S pF pF pF ns ns ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS VGS=0, ID=250μA VGS(th) VDS=VGS, ID=250μA VSD VGS=0, IS=360mA rDS(ON) VGS=4.5V, ID=0.95A rDS(ON) VGS=4.5V, ID=0.77A rDS(ON) VGS=2.5V, ID=0.67A rDS(ON) VGS=1.8V, ID=0.2A gFS VDS=10V, ID=810mA Crss VDS=16V, VGS=0, f=1.0MHz Ciss VDS=16V, VGS=0, f=1.0MHz Coss VDS=16V, VGS=0, f=1.0MHz ton VDD=10V, VGS=4.5V, ID=950mA, RG=6Ω toff VDD=10V, VGS=4.5V, ID=950mA, RG=6Ω otherwise noted) MIN TYP 1.0 5.0 20 24 0.45 0.76 85 85 130 190 2.0 80 200 60 20 25 R1 (27-January 2010) CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C8120 R1 (27-January 2010) w w w. c e n t r a l s e m i . c o m