CMPSH-3E

CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an SOT-23 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100mA max to 200mA max. SOT-23 CASE CMPSH-3E: CMPSH-3AE: CMPSH-3CE: CMPSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES ♦ ♦ BVR from 30V min to 40V min. VF from 1.0V max to 0.8V max. MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: D95E DB1E DB2E DA5E UNITS V mA mA mA mW °C °C/W ♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current Peak Repetitive Forward Voltage Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR ♦BVR VF ♦VF ♦VF ♦♦VF CT trr MAXIMUM RATINGS: (TA=25°C) SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA 40 200 350 750 350 -65 to +150 357 CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP MAX VR=25V 90 500 VR=25V, TA=100°C 25 100 IR=100µA 40 50 IF=2.0mA 0.29 0.33 IF=15mA 0.37 0.42 IF=100mA 0.61 0.80 IF=200mA 0.65 1.0 VR=1.0V, f=1.0MHz 7.0 IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 UNITS nA μA V V V V V pF ns ♦ Enhanced specification ♦♦ Additional Enhanced specification R3 (27-January 2010) CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPSH-3E LEAD CODE: 1) Anode 2) No Connection 3) Cathode MARKING CODE: D95E CMPSH-3AE LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 MARKING CODE: DB1E CMPSH-3CE LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 MARKING CODE: DB2E CMPSH-3SE LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: DA5E R3 (27-January 2010) w w w. c e n t r a l s e m i . c o m