CMPSH-3SE

CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an SOT-23 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100 mA max to 200 mA max. SOT-23 CASE CMPSH-3E: CMPSH-3AE: CMPSH-3CE: CMPSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES ♦ ♦ BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. CODE: CODE: CODE: CODE: D95E DB1E DB2E DA5E UNITS V mA mA mA mW °C °C/W MARKING MARKING MARKING MARKING SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA MAXIMUM RATINGS: (TA=25°C) ♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current Peak Repetitive Forward Voltage Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 40 200 350 750 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL TEST CONDITIONS IR=100µA IF=2.0mA IF=15mA IF=100mA IF=200mA VR=25V VR=25V, TA=100°C VR=1.0V, f=1 MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω (TA=25°C unless otherwise noted) MIN 40 TYP 50 0.29 0.37 0.61 0.65 90 25 7.0 MAX UNITS V V V V V nA µA pF ns ♦BVR ♦VF ♦VF ♦♦VF VF 0.33 0.42 0.80 1.0 500 100 5.0 IR IR CT trr ♦ ♦♦ Enhanced specification. Additional Enhanced specification. R2 (6-August 2003) Central TM Semiconductor Corp. CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE - MECHANICAL OUTLINE 2 1 2 1 2 1 2 1 D1 D2 D1 D2 D1 D2 3 3 3 3 LEAD CODE: CMPSH-3E 1) Anode 2) No Connection 3) Cathode MARKING CODE: D95E LEAD CODE: CMPSH-3AE 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 MARKING CODE: DB1E LEAD CODE: CMPSH-3CE 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 MARKING CODE: DB2E LEAD CODE: CMPSH-3SE 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: DA5E R2 (6-August 2003)