CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 75V min to 100V min. (145V TYP)
SOT-23 CASE
♦ ♦
VCE from 1.0V max to 0.5V max. (0.12V TYP) hFE from 40 to 60 min. (130 TYP)
UNITS V V V mA mW °C °C/W
♦ Collector-Base Voltage ♦ Collector-Emitter Voltage
MAXIMUM RATINGS: (TA=25°C)
Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA
100 45 6.0 600 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=60V ICBO VCB=60V, TA=125°C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V IC=10µA 100 145 ♦ BVCBO IC=10mA 45 53 ♦ BVCEO BVEBO IE=10μA 6.0 0.92 ♦ VCE(SAT) IC=150mA, IB=15mA 0.12 ♦ VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA VCE=10V, IC=0.1mA 100 210 ♦ hFE VCE=10V, IC=1.0mA 100 205 ♦ hFE VCE=10V, IC=10mA 100 205 ♦ hFE VCE=1.0V, IC=150mA 75 150 ♦ hFE hFE VCE=10V, IC=150mA 100 VCE=10V, IC=500mA 60 130 ♦ hFE fT VCE=20V, IC=20mA, f=100MHz 300 Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz
♦ Enhanced specification
MAX 10 10 10 10
0.15 0.50 1.2 2.0
UNITS nA μA nA nA V V V V V V V
300 MHz pF pF
8.0 25
R2 (1-February 2010)
CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 NF VCE=10V,IC=100μA, RS =1.0KΩ, f=1.0kHz 4.0 td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 tf VCC=30V, IC=150mA, IB1=IB2=15mA 60
UNITS kΩ kΩ X10-4 X10-4
μS μS ps dB ns ns ns ns
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1PE
R2 (1-February 2010)
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