CMPT2369_10

CMPT2369 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE: C1J SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE Cob fT ts ton toff SYMBOL VCBO VCES VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V V mA mW °C °C/W 40 40 15 4.5 500 350 -65 to +150 357 CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=20V VCB=20V, TA=125°C IC=10µA 40 IC=10µA 40 IC=10mA 15 IE=10µA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=1.0V, IC=10mA VCE=2.0V, IC=100mA VCB=5.0V, IE=0, f=1.0MHz VCE=10V, IC=10mA, f=100MHz VCC=3.0V, IC=IB1=IB2=10mA VCC=3.0V, IC=10mA, IB1=3.0mA VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 4.5 0.7 40 20 500 MAX 0.4 30 UNITS µA µA V V V V V V 0.25 0.85 120 4.0 13 12 18 pF MHz ns ns ns R5 (1-February 2010) CMPT2369 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1J R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m