CMPT2907A_10

CMPT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: C2F SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 60 5.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=50V ICBO VCB=50V, TA=125°C ICEV VCE=30V, VEB=0.5V BVCBO IC=10µA 60 BVCEO IC=10mA 60 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 hFE VCE=10V, IC=500mA 50 fT VCE=20V, IC=50mA, f=100MHz 200 Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz MAX 10 10 50 0.4 1.6 1.3 2.6 UNITS nA µA nA V V V V V V V 300 MHz pF pF 8.0 30 R5 (1-February 2010) CMPT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX ton td tr toff ts tf VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA IB1=15mA IB1=15mA 45 10 40 100 80 30 UNITS ns ns ns ns ns ns VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2F R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m