CMPT3410_10

CMPT3410 SURFACE MOUNT LOW VCE(SAT) NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requiring high current and Low VCE(SAT). MARKING CODE: C341 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA UNITS V V V A A mW °C °C/W 40 25 6.0 1.0 1.5 350 -65 to +150 357 CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VCB=40V VEB=6.0V IC=100μA 40 IC=10mA 25 IE=100μA 6.0 IC=50mA, IB=5.0mA 20 IC=100mA, IB=10mA 35 IC=200mA, IB=20mA 75 IC=500mA, IB=50mA 130 IC=800mA, IB=80mA 200 IC=1.0A, IB=100mA 250 IC=800mA, IB=80mA VCE=1.0V, IC=10mA VCE=1.0V, IC=10mA 100 VCE=1.0V, IC=100mA 100 VCE=1.0V, IC=500mA 100 VCE=1.0V, IC=1.0A 50 VCE=10V, IC=50mA, f=100MHz 100 VCB=10V, IE=0, f=1.0MHz MAX 100 100 50 75 150 250 400 450 1.1 0.9 300 UNITS nA nA V V V mV mV mV mV mV mV V V 10 MHz pF  R1 (1-February 2010) CMPT3410 SURFACE MOUNT LOW VCE(SAT) NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C341 R1 (1-February 2010) w w w. c e n t r a l s e m i . c o m