CMPT3640_10

CMPT3640 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3640 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for saturated switching applications. MARKING CODE: C2J SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W 12 12 4.0 80 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES ICES IB BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE fT Cob Cib td tr VCE=6.0V VCE=6.0V, VCE=6.0V, IC=100µA IC=10mA IE=100µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA, TA=65°C IC=10mA, IB=0.5mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=0.3V, IC=10mA VCE=1.0V, IC=50mA VCE=5.0V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 0.75 0.80 30 20 500 TA=65°C VEB=0 12 12 4.0 MAX 10 10 10 UNITS nA µA nA V V V 0.20 0.60 0.25 0.95 1.00 1.50 120 V V V V V V MHz 3.5 3.5 10 30 pF pF ns ns R5 (1-February 2010) CMPT3640 SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX ts tf ton ton toff toff VCC=6.0V, IC=50mA, IB1=IB2=5.0mA VCC=6.0V, IC=50mA, IB1=IB2=5.0mA VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA VCC=1.5V, IC=10mA, IB1=0.5mA VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA VCC=1.5V, IC=10mA, IB1=IB2=0.5mA 20 12 25 60 35 75 UNITS ns ns ns ns ns ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2J R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m