CMPT3646_10

CMPT3646 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications. MARKING CODE: C2R SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC PD TJ, Tstg ΘJA 40 40 15 5.0 200 350 -65 to +150 357 UNITS V V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=20V ICES VCE=20V, TA=65°C BVCBO IC=100µA 40 BVCES IC=10µA 40 BVCEO IC=10mA 15 BVEBO IE=100µA 5.0 VCE(SAT) IC=30mA, IB=3.0mA VCE(SAT) IC=30mA, IB=3.0mA, TA=65°C VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=300mA, IB=30mA VBE(SAT) IC=30mA, IB=3.0mA 0.75 VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=300mA, IB=30mA hFE VCE=0.4V, IC=30mA 30 hFE VCE=0.5V, IC=100mA 25 hFE VCE=1.0V, IC=300mA 15 MAX 0.5 3.0 0.20 0.30 0.28 0.50 0.95 1.20 1.70 120 UNITS µA µA V V V V V V V V V V V R3 (1-February 2010) CMPT3646 SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT Cob Cib ton toff ts VCE=10V, IC=30mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCC=10V, IC=300mA, IB1=30mA VCC=10V, IC=300mA, IB1=IB2=30mA VCC=10V, IC=IB1=IB2=10mA 350 5.0 8.0 18 28 18 UNITS MHz pF pF ns ns ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2R R3 (1-February 2010) w w w. c e n t r a l s e m i . c o m