CMPT3906G

CMPT3904 CMPT3904G* CMPT3906 CMPT3906G* NPN PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. SOT-23 CASE * Device is Halogen Free by design MARKING CODES: CMPT3904: CMPT3906: CMPT3904G*: CMPT3906G*: C1A C2A CG1 CG2 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT3904 CMPT3906 CMPT3904G* CMPT3906G* 60 40 40 6.0 200 350 -65 to +150 357 CMPT3906 CMPT3906G* MIN MAX 50 40 40 5.0 0.65 60 80 100 60 30 50 0.25 0.40 0.85 0.95 300 40 5.0 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.0V IBL VCE=30V, VEB=3.0V BVCBO IC=10μA BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, VCE=1.0V, IC=0.1mA IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA CMPT3904 CMPT3904G* MIN MAX 50 60 40 6.0 0.65 40 70 100 60 30 50 0.20 0.30 0.85 0.95 300 - UNITS nA nA V V V V V V V R7 (1-February 2010) CMPT3904 CMPT3904G* CMPT3906 CMPT3906G* NPN PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS CMPT3904 ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) CMPT3904G* SYMBOL TEST CONDITIONS MIN MAX fT VCE=20V, IC=10mA, f=100MHz 300 Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 Cib hie hre hfe hoe NF td tr ts tf VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS=1.0kΩ, f=10Hz to 15.7kHz VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 1.0 0.5 100 1.0 8.0 10 8.0 400 40 5.0 35 35 200 50 CMPT3906 CMPT3906G* MIN MAX 250 2.0 0.1 100 3.0 4.5 10 12 10 400 60 4.0 35 35 225 75 UNITS MHz pF pF kΩ x10-4 μS dB ns ns ns ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT3904: C1A CMPT3906: C2A CMPT3904G*: CG1 CMPT3906G*: CG2 * Device is Halogen Free by design R7 (1-February 2010) w w w. c e n t r a l s e m i . c o m