CMPT4401 NPN
CMPT4403 PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT4401 and
CMPT4403 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
small signal general purpose amplifier and switching
applications.
MARKING CODES: CMPT4401: C2X
CMPT4403: C2T
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
CMPT4401
60
40
40
V
VEBO
IC
6.0
5.0
V
UNITS
V
600
mA
225
mW
PD
TJ, Tstg
-65 to +150
°C
ΘJA
556
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT4401
SYMBOL
TEST CONDITIONS
MIN
MAX
ICEV
VCE=35V, VEB=0.4V
0.1
IBEV
CMPT4403
40
CMPT4403
MIN
MAX
0.1
UNITS
μA
BVCBO
VCE=35V, VEB=0.4V
IC=100μA
BVCEO
IC=1.0mA
40
-
40
-
V
BVEBO
IE=100μA
6.0
-
5.0
-
V
VCE(SAT)
VCE(SAT)
IC=150mA,
IC=500mA,
VBE(SAT)
VBE(SAT)
hFE
IB=15mA
IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1.0V, IC=0.1mA
-
0.1
-
0.1
μA
60
-
40
-
V
-
0.40
-
0.40
V
-
0.75
-
0.75
V
0.75
0.95
0.75
0.95
V
-
1.2
-
1.3
V
20
-
30
-
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
40
-
60
-
80
-
100
-
VCE=1.0V, IC=150mA
VCE=2.0V, IC=150mA
VCE=2.0V, IC=500mA
100
300
-
-
-
-
100
300
40
-
20
-
VCE=10V, IC=20mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
250
-
200
-
Cob
-
6.5
-
8.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
-
30
-
30
pF
hFE
hFE
hFE
hFE
hFE
fT
MHz
R7 (29-June 2021)
CMPT4401 NPN
CMPT4403 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
CMPT4401
CMPT4403
SYMBOL TEST CONDITIONS
MIN
MAX
MIN
MAX
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
15
1.5
15
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
8.0
0.1
8.0
hfe
UNITS
kΩ
x10-4
tr
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA
VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
-
225
-
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
-
30
-
50
ns
hoe
td
40
500
60
500
1.0
30
1.0
100
μS
-
15
-
15
ns
-
20
-
20
ns
SOT-23 CASE - MECHANICAL OUTLINE
SYMBOL
A
B
C
D
E
F
G
H
I
J
LEAD CODE:
1) Base
2) Emitter
3) Collector
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.003
0.007
0.08
0.18
0.006
0.15
0.005
0.13
0.035
0.044
0.89
1.12
0.110
0.120
2.80
3.05
0.075
1.90
0.037
0.95
0.047
0.055
1.19
1.40
0.083
0.104
2.10
2.64
0.014
0.020
0.35
0.50
SOT-23 (REV: R4)
MARKING CODES:
CMPT4401: C2X
CMPT4403: C2T
R7 (29-June 2021)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
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Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
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• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
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Main Fax: (631) 435-1824
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www.centralsemi.com
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