CMPT4403

CMPT4403

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMPT4403 - SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMPT4403 数据手册
CMPT4401 NPN CMPT4403 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT4401 and CMPT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMPT4401: C2X CMPT4403: C2T SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT4401 60 40 6.0 CMPT4403 40 40 5.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT4401 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=35V, VEB=0.4V 0.1 IBEV VCE=35V, VEB=0.4V 0.1 BVCBO IC=100μA 60 BVCEO IC=1.0mA 40 BVEBO IE=100μA 6.0 VCE(SAT) IC=150mA, IB=15mA 0.40 VCE(SAT) IC=500mA, IB=50mA 0.75 VBE(SAT) IC=150mA, IB=15mA 0.75 0.95 VBE(SAT) IC=500mA, IB=50mA 1.2 hFE VCE=1.0V, IC=0.1mA 20 hFE VCE=1.0V, IC=1.0mA 40 hFE VCE=1.0V, IC=10mA 80 - CMPT4403 MIN MAX 0.1 0.1 40 40 5.0 0.40 0.75 0.75 0.95 1.3 30 60 100 - UNITS μA μA V V V V V V V R5 (1-February 2010) CMPT4401 NPN CMPT4403 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) CMPT4401 CMPT4403 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=1.0V, IC=150mA 100 300 hFE VCE=2.0V, IC=150mA 100 300 hFE VCE=2.0V, IC=500mA 40 20 fT VCE=10V, IC=20mA, f=100MHz 250 200 Cob VCB=5.0V, IE=0, f=1.0MHz 6.5 8.5 Cib VBE=0.5V, IC=0, f=1.0MHz 30 30 hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 15 1.5 15 hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 8.0 0.1 8.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 40 500 60 500 hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 30 1.0 100 td VCC=30V, VBE=2.0, IC=150mA, IB1=15mA 15 15 tr VCC=30V, VBE=2.0, IC=150mA, IB1=15mA 20 20 ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 225 tf VCC=30V, IC=150mA, IB1=IB2=15mA 30 30 UNITS MHz pF pF kΩ x10-4 μS ns ns ns ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT4401: C2X CMPT4403: C2T R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m
CMPT4403
1. 物料型号: - CMPT4401:C2X - CMPT4403:C2T

2. 器件简介: - CENTRAL SEMICONDUCTOR生产的CMPT4401和CMPT4403是互补硅晶体管,采用外延平面工艺制造,表面贴装封装,适用于小信号通用放大和开关应用。

3. 引脚分配: - 1) 基极 - 2) 发射极 - 3) 集电极

4. 参数特性: - 最大额定值(TA=25°C): - 集-基电压(VCBO):CMPT4401为60V,CMPT4403为40V。 - 集-射电压(VCEO):两者均为40V。 - 发-基电压(VEBO):CMPT4401为6.0V,CMPT4403为5.0V。 - 连续集电极电流(IC):CMPT4401为600mA。 - 功率耗散(PD):CMPT4401为350mW。 - 工作和存储结温(TJ.Tstg):-65至+150°C。 - 热阻(OJA):CMPT4403为357°C/W。

5. 功能详解: - 电气特性(TA=25°C除非另有说明): - 包括ICEV、BEV、BVCBO、BVCEO、BVEBO、VCE(SAT)、VBE(SAT)、hFE、TT、Cob、Cib、hie、hre等参数。

6. 应用信息: - 该晶体管适用于小信号通用放大和开关应用。

7. 封装信息: - SOT-23封装。 - 提供了详细的机械尺寸数据。
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