CMPT5086_10

CMPT5086 CMPT5087 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMPT5086: C2P CMPT5087: C2Q SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W 50 50 3.0 50 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT5086 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=10V 10 ICBO VCB=35V 50 BVCBO IC=100μA 50 BVCEO IC=1.0mA 50 BVEBO IE=100μA 3.0 VCE(SAT) IC=10mA, IB=1.0mA 0.30 VBE(SAT) IC=10mA, IB=1.0mA 0.85 hFE VCE=5.0V, IC=0.1mA 150 500 hFE VCE=5.0V, IC=1.0mA 150 hFE VCE=5.0V, IC=10mA 150 fT VCE=5.0V, IC=500μA, f=20MHz 40 Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 150 600 NF VCE=5.0V, IC=20mA, RS=10kΩ, f=10Hz to 15.7kHz 3.0 NF VCE=5.0V, IC=100μA, RS=3.0kΩ, f=1.0kHz 3.0 CMPT5087 MIN MAX 10 50 50 50 3.0 0.30 0.85 250 800 250 250 40 250 4.0 900 2.0 2.0 UNITS nA nA V V V V V MHz pF dB dB R5 (1-February 2010) CMPT5086 CMPT5087 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5086: C2P CMPT5087: C2Q R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m