CMPT5087E_10

CMPT5087E PNP CMPT5088E NPN ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5087E and CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise. MARKING CODES: CMPT5087E: C2QE CMPT5088E: C1QE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W ♦ Collector-Base Voltage ♦Collector-Emitter Voltage ♦Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 50 50 5.0 100 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO IEBO BVCBO VCB=20V VEB=3.0V IC=100µA IC=1.0mA IE=100µA IC=10mA, IB=1.0mA IC=100mA, IB=10mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz 300 300 300 50 100 50 50 5.0 TYP NPN PNP MAX 50 50 UNITS nA nA V V V ♦BVCEO ♦BVEBO ♦ VCE(SAT) ♦VCE(SAT) ♦♦VBE(SAT) ♦ hFE hFE hFE 135 65 8.7 45 110 700 430 435 430 125 150 105 7.5 50 225 700 390 380 350 75 100 400 800 900 mV mV mV ♦hFE ♦♦fT ♦ Cob Cib hfe NF MHz 4.0 15 pF pF 350 3.0 1400 dB ♦ Enhanced specification ♦♦ Additional Enhanced specification R1 (1-February 2010) CMPT5087E PNP CMPT5088E NPN ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5087E: C2QE CMPT5088E: C1QE R1 (1-February 2010) w w w. c e n t r a l s e m i . c o m