CMPT5088

CMPT5088

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMPT5088 - SURFACE MOUNT NPN SILICON TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMPT5088 数据手册
CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODES: CMPT5088: C1Q CMPT5089: C1R SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT5088 35 30 CMPT5089 30 25 UNITS V V V mA mW °C °C/W 4.5 50 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT5088 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=20V 50 ICBO VCB=15V IEBO VEB=3.0V 50 IEBO VEB=4.5V BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib hfe NF IC=100μA IC=1.0mA IE=100μA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500μA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS=10kΩ, f=10Hz to 15.7kHz 35 30 4.5 300 350 300 50 350 0.5 0.8 900 4.0 15 1400 3.0 CMPT5089 MIN MAX 50 30 25 4.5 400 450 400 50 450 100 0.5 0.8 1200 4.0 15 1800 2.0 UNITS nA nA nA nA V V V V V MHz pF pF dB R7 (9-September 2010) CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5088: C1Q CMPT5089: C1R R7 (9-September 2010) w w w. c e n t r a l s e m i . c o m
CMPT5088
1. 物料型号: - CMPT5088和CMPT5089是由Central Semiconductor生产的NPN硅晶体管。

2. 器件简介: - CMPT5088和CMPT5089是采用外延平面工艺制造的NPN硅晶体管,以环氧树脂封装在表面贴装包中,适用于小信号通用和开关应用。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:发射极(Emitter) - 引脚3:集电极(Collector)

4. 参数特性: - 最大额定值: - 集电极-基极电压(VCBO):CMPT5088为35V,CMPT5089为30V - 集电极-发射极电压(VCEO):CMPT5088为30V,CMPT5089为25V - 发射极-基极电压(VEBO):CMPT5088为4.5V,CMPT5089为50mA - 集电极电流(IC):两者均为350mW - 工作和存储结温(TJ, Tstg):-65至+150°C - 热阻(ΘJA):357°C/W

5. 功能详解: - 电气特性(TA=25°C,除非另有说明): - 集电极饱和电压(VCE(SAT)):IC=10mA, IB=1.0mA时,两者均为0.5V - 基极-发射极饱和电压(VBE(SAT)):IC=10mA, IB=1.0mA时,两者均为0.8V - 直流电流增益(hFE):VCE=5.0V, IC=0.1mA时,CMPT5088为300至900,CMPT5089为400至1200 - 截止频率(fT):VCE=5.0V, IC=10mA时,CMPT5088为300MHz,CMPT5089为400MHz

6. 应用信息: - 适用于小信号通用和开关应用。

7. 封装信息: - SOT-23表面贴装封装。
CMPT5088 价格&库存

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