CMPT5089

CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODES: CMPT5088: C1Q CMPT5089: C1R SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT5088 35 30 CMPT5089 30 25 UNITS V V V mA mW °C °C/W 4.5 50 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT5088 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=20V 50 ICBO VCB=15V IEBO VEB=3.0V 50 IEBO VEB=4.5V BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib hfe NF IC=100μA IC=1.0mA IE=100μA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500μA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS=10kΩ, f=10Hz to 15.7kHz 35 30 4.5 300 350 300 50 350 0.5 0.8 900 4.0 15 1400 3.0 CMPT5089 MIN MAX 50 30 25 4.5 400 450 400 50 450 100 0.5 0.8 1200 4.0 15 1800 2.0 UNITS nA nA nA nA V V V V V MHz pF pF dB R7 (9-September 2010) CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5088: C1Q CMPT5089: C1R R7 (9-September 2010) w w w. c e n t r a l s e m i . c o m