CMPT5401_10

CMPT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: C2L SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 160 150 5.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=120V ICBO VCB=120V, TA=100°C IEBO VEB=3.0V BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe NF IC=100μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=250μA, RS=1.0kΩ, f=10Hz to 15.7kHz 50 60 50 100 40 160 150 5.0 MAX 50 50 50 UNITS nA μA nA V V V 0.2 0.5 1.0 1.0 240 300 6.0 200 8.0 V V V V MHz pF dB R6 (1-February 2010) CMPT5401 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2L R6 (1-February 2010) w w w. c e n t r a l s e m i . c o m