CMPT6427_10

CMPT6427 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6427 type is a NPN silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: C1V SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA otherwise noted) MIN UNITS V V V mA mW °C °C/W 40 40 12 500 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS ICBO VCB=30V ICEO VCE=25V IEBO VBE=10V BVCBO IC=100μA BVCEO IC=10mA BVEBO IE=10μA VCE(SAT) IC=50mA, IB=0.5mA VCE(SAT) IC=500mA, IB=0.5mA VBE(SAT) IC=500mA, IB=0.5mA VBE(ON) VCE=5.0V, IC=50mA hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA hFE hFE VCE=5.0V, IC=500mA fT VCE=5.0V, IC=10mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz NF VCE=5.0V, IC=1.0mA, RS=100kΩ, f=1.0kHz to 15.7kHz MAX 50 1.0 50 40 40 12 1.20 1.50 2.00 1.75 100K 200K 140K 7.0 15 10 UNITS nA μA nA V V V V V V V 10K 20K 14K 130 MHz pF pF dB R6 (1-February 2010) CMPT6427 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1V R6 (1-February 2010) w w w. c e n t r a l s e m i . c o m