CMPT6517

CMPT6517 NPN CMPT6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS Central TM Semiconductor Corp. SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6517, CMPT6520 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage driver and amplifier applications. MARKING CODE: CMPT6517: C1Z CMPT6520: C2Z SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 357 VCBO VCEO VEBO IC IB PD 350 350 5.0 500 250 350 UNITS V V V mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=250V IEBO IEBO BVCBO BVCEO BVEBO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(ON) hFE hFE VEB=5.0V (CMPT6517) VEB=4.0V (CMPT6520) IC=100µA IC=1.0mA IE=10µA (CMPT6517) IE=10µA (CMPT6520) IC=10mA, IC=20mA, IC=30mA, IC=50mA, IC=10mA, IC=20mA, IB=1.0mA IB=2.0mA IB=3.0mA IB=5.0mA IB=1.0mA IB=2.0mA 350 350 6.0 5.0 MAX 50 50 50 UNITS nA nA nA V V V V 0.30 0.35 0.50 1.0 0.75 0.85 0.90 2.0 20 30 V V V V V V V V IC=30mA, IB=3.0mA IC=10V, IC=100mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA R4 (26-September 2002) Central SYMBOL hFE hFE hFE fT Ccb Ceb Ceb TM Semiconductor Corp. CMPT6517 NPN CMPT6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=10V, IC=30mA 30 VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=20V, IC=10mA, f=20MHz VCB=20V, IC=0, f=1.0MHz VEB=0.5V, IE=0, f=1.0MHz (CMPT6517) VEB=0.5V, IE=0, f=1.0MHz (CMPT6520) 20 15 40 MAX 200 200 200 6.0 80 100 UNITS MHz pF pF pF SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: CMPT6517: C1Z CMPT6520: C2Z R4 (26-September 2002)