CMPT8599

CMPT8599

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMPT8599 - SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMPT8599 数据手册
CMPT8099 NPN CMPT8599 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT8099 and CMPT8599 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose audio amplifier applications. MARKING CODES: CMPT8099: CKB CMPT8599: C2W SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT8099 80 80 6.0 CMPT8599 80 80 5.0 UNITS V V V mA mW °C °C/W 500 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT8099 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V 0.1 IEBO VBE=6.0V 0.1 IEBO VBE=4.0V BVCBO IC=100µA 80 BVCEO IC=10mA 80 BVEBO IE=10µA 6.0 VCE(SAT) IC=100mA, IB=5.0mA 0.4 VCE(SAT) IC=100mA, IB=10mA 0.3 VBE(ON) VCE=5.0V, IC=10mA 0.6 0.8 hFE VCE=5.0V, IC=1.0mA 100 300 hFE VCE=5.0V, IC=10mA 100 hFE VCE=5.0V, IC=100mA 75 fT VCE=5.0V, IC=10mA, f=100MHz 150 Cob VCB=10V, IE=0, f=1.0MHz 6.0 Cib VBE=0.5V, IC=0, f=1.0MHz 25 CMPT8599 MIN MAX 0.1 0.1 80 80 5.0 0.4 0.3 0.6 0.8 100 300 100 75 150 4.5 30 UNITS µA µA µA V V V V V V MHz pF pF R5 (1-February 2010) CMPT8099 NPN CMPT8599 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT8099: CKB CMPT8599: C2W R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m
CMPT8599
### 物料型号 - 型号:CMPT8099(NPN型)和CMPT8599(PNP型)

### 器件简介 - 描述:CENTRAL SEMICONDUCTOR生产的CMPT8099和CMPT8599是互补硅晶体管,采用外延平面工艺制造,环氧模塑在表面贴装封装中,设计用于一般用途的音频放大应用。

### 引脚分配 - 引脚:1)基极 2)发射极 3)集电极

### 参数特性 - 最大额定值: - 集电极-基极电压(VCBO):80V - 集电极-发射极电压(VCEO):80V - 发射极-基极电压(VEBO):CMPT8099为6.0V,CMPT8599为5.0V - 连续集电极电流(IC):500mA - 功率耗散(PD):350mW - 工作和存储结温度(T):-65至+150°C - 热阻(eJA):357°C/W

- 电气特性(TA=25°C除非另有说明): - 集电极-基极电流(ICBO):0.1A - 发射极-基极电流(EBO):CMPT8099为0.1A,CMPT8599为0.1A(VBE=4.0V) - 集电极-基极击穿电压(BVCBO):80V - 集电极-发射极击穿电压(BVCEO):80V - 饱和压降(VCE(SAT)):CMPT8099为0.4V,CMPT8599为0.4V(Ic=100mA, Ig=5.0mA) - 导通电压(VBE(ON)):CMPT8099为0.6V,CMPT8599为0.8V(VcE=5.0V, Ic=10mA) - 电流增益(hFE):CMPT8099为100至300,CMPT8599为100至300 - 截止频率(fr):150MHz - 集电极-基极电容(Cob):CMPT8099为6.0pF,CMPT8599为4.5pF - 基极-发射极电容(Cib):CMPT8099为25pF,CMPT8599为30pF

### 功能详解 - 功能:这两款晶体管设计用于一般用途的音频放大应用,利用互补特性,可以在音频放大电路中实现更好的性能和稳定性。

### 应用信息 - 应用:适用于音频放大器、开关电源、驱动电路等。

### 封装信息 - 封装:SOT-23表面贴装封装。
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