CMPT918_10

CMPT918 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. MARKING CODE: C3B SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 30 15 3.0 50 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=15V BVCBO IC=1.0μA 30 BVCEO IC=3.0mA 15 BVEBO IE=10μA 3.0 VCE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=1.0V, IC=3.0mA 20 fT VCE=10V, IC=4.0mA, f=100MHz 600 Cob VCB=0V, IE=0, f=1.0MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz Pout Gpe NF VCB=15V, IC=8.0mA, f=500MHz VCB=12V, IC=6.0mA, f=200MHz VCE=6.0V, IC=1.0mA, RS=50Ω, f=60MHz 30 11 MAX 10 0.4 1.0 UNITS nA V V V V V MHz pF pF pF mW dB dB 3.0 1.7 2.0 6.0 R5 (27-January 2010) CMPT918 SURFACE MOUNT NPN SILICON RF TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C3B R5 (27-January 2010) w w w. c e n t r a l s e m i . c o m