CMPT992E

CMPT992 CMPT992P CMPT992F CMPT992E SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT992 types are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE. SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 110 110 5.0 50 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IEBO VEB=5.0V BVCBO IC=100μA 110 BVCEO IC=1.0mA 110 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=1.0 mA VBE(ON) VCE=6.0V, IC=1.0mA 0.55 fT VCE=6.0V, IC=1.0mA 50 Cob VCB=30V, IE=0, f=1.0MHz NF VCE=5.0V, IC=100μA, RS=10kΩ, f=10Hz to 15.7KHz CMPT992 MIN MAX 150 200 800 CMPT992P MIN MAX 150 200 400 MAX 30 0.30 0.65 3.0 3.0 CMPT992F MIN MAX 150 300 600 UNITS nA V V V V V MHz pF dB CMPT992E MIN MAX 150 400 800 hFE hFE VCE=6.0V, IC=100μA VCE=6.0V, IC=1.0mA R2 (1-February 2010) CMPT992 CMPT992P CMPT992F CMPT992E SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector DEVICE CMPT992 CMPT992P CMPT992F CMPT992E MARKING CODE C992 C992P C992F C992E R2 (1-February 2010) w w w. c e n t r a l s e m i . c o m