CMPTA14E

CMPTA14E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufactured by the epitaxial planar process, epoxy molded in a surface mount SOT-23 package, designed for applications requiring extremely high gain. MARKING CODE: C1NE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 30V min to 40V min. SOT-23 CASE ♦ ♦ ♦ ♦ MAXIMUM RATINGS (TA=25 °C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA SYMBOL VCBO VCES VEBO IC PD VCE(SAT) from 1.5V max to 1.0V max. hFE from 10K min to 30K min. UNITS 40 40 10 500 350 -65 to +150 357 V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS (TA=25 °C unless otherwise noted) SYMBOL TEST CONDITIONS VCB=40V VEB=10V IC=100µA IC=100mA, IB=0.1mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=500mA VCE=5.0V, IC=10mA, f=100MHz Enhanced specification. Additional Enhanced specification. 40 60 0.75 30,000 40,000 10,000 125 70,000 75,000 35,000 MHz 1.0 2.0 MIN TYP MAX 100 100 UNITS nA nA V V V ♦ ICBO ♦ ♦ ♦ ♦ ♦♦ IEBO BVCES VCE(SAT) VBE(ON) hFE hFE hFE fT ♦ ♦♦ R4 (20-February 2003) Central TM CMPTA14E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Semiconductor Corp. SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: C1NE R4 (20-February 2003)