CMPTA29_10

CMPTA29 SURFACE MOUNT HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is an NPN silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain. MARKING CODE: C29 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD TJ, Tstg ΘJA 100 100 12 500 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) unless otherwise noted) SYMBOL ICES ICBO IEBO BVCES BVCBO BVEBO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE fT Cob TEST CONDITIONS VCE=80V VCB=80V VBE=10V IC=100µA IC=100µA IE=10µA IC=10mA, IB=10µA IC=100mA, IB=100µA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 100 100 12 1.2 1.5 2.0 10,000 10,000 125 8.0 MHz pF MIN MAX 500 100 100 UNITS nA nA nA V V V V V V R4 (3-February 2010) CMPTA29 SURFACE MOUNT HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C29 R4 (3-February 2010) w w w. c e n t r a l s e m i . c o m