CMRDM3590_10

CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CR SOT-963 CASE • Device is Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, tp < 5.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Power Dissipation: 125mW • Low Package Profile: 0.5mm (MAX) • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small SOT-963 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg ΘJA UNITS V V mA mA mW °C °C/W UNITS nA nA nA V V Ω Ω Ω Ω Ω S pF pF pF ns ns 20 8.0 160 200 125 -65 to +150 1000 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=5.0V, VDS=0 100 IDSS VDS=5.0V, VGS=0 50 IDSS VDS=16V, VGS=0 100 BVDSS VGS=0, ID=250μA 20 VGS(th) VDS=VGS, ID=250μA 0.4 1.0 rDS(ON) VGS=4.5V, ID=100mA 1.5 3.0 rDS(ON) VGS=2.5V, ID=50mA 2.0 4.0 rDS(ON) VGS=1.8V, ID=20mA 3.0 6.0 rDS(ON) VGS=1.5V, ID=10mA 4.0 10 rDS(ON) VGS=1.2V, ID=1.0mA 7.0 gFS VDS=5.0V, ID=125mA 1.3 Crss VDS=15V, VGS=0, f=1.0MHz 2.2 Ciss VDS=15V, VGS=0, f=1.0MHz 9.0 Coss VDS=15V, VGS=0, f=1.0MHz 3.0 ton VDD=10V, VGS=4.5V, ID=200mA 40 toff VDD=10V, VGS=4.5V, ID=200mA 150 R3 (8-February 2010) CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS SOT-963 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: CR R3 (8-February 2010) w w w. c e n t r a l s e m i . c o m