CMRDM7590

CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM7590 is an Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CW SOT-963 CASE • Device is Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, tp < 5.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Power Dissipation: 125mW • Low Package Profile: 0.5mm (MAX) • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatibility • Small SOT-963 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg ΘJA 20 8.0 140 180 125 -65 to +150 1000 UNITS V V mA mA mW °C °C/W UNITS nA nA nA V 1.0 4.0 5.5 8.0 11 20 1.3 1.0 12 2.7 60 210 5.0 7.0 10 17 V Ω Ω Ω Ω Ω S pF pF pF ns ns ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=5.0V, VDS=0 100 IDSS IDSS BVDSS VGS(th) rDS(ON) rDS(ON) rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss ton toff VDS=5.0V, VGS=0 VDS=16V, VGS=0 VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=4.5V, ID=100mA VGS=2.5V, ID=50mA VGS=1.8V, VGS=1.5V, ID=20mA ID=10mA 20 0.4 50 100 VGS=1.2V, ID=1.0mA VDS=5.0V, ID=125mA VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=1.0MHz VDD=10V, VGS=4.5V, ID=200mA VDD=10V, VGS=4.5V, ID=200mA R1 (8-February 2010) CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS SOT-963 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: CW R1 (8-February 2010) w w w. c e n t r a l s e m i . c o m