CMSD2004S_10

CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING CODE: B6D SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 300 300 200 225 625 4.0 1.0 275 -65 to +150 455 UNITS V V mA mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=240V 100 IR VR=240V, TA=150°C 100 BVR IR=100μA 300 VF IF=100mA 1.0 CT VR=0, f=1.0MHz 5.0 trr IF=IR=30mA, Irr=3.0mA, RL=100Ω 50 UNITS nA μA V V pF ns R6 (8-February 2010) CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: B6D R6 (8-February 2010) w w w. c e n t r a l s e m i . c o m