CMSD2005S_10

CMSD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-323 surface mount package, designed for applications requiring high voltage capability. MARKING CODE: B5D SOT-323 CASE MAXIMUM RATINGS: (TA=25 °C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR BVR VF VF VF CT trr SYMBOL VR VRRM IRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 300 350 200 225 625 4.0 1.0 275 -65 to +150 455 UNITS V V mA mA mA A A mW °C °C/W CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VR=280V 100 VR=280V, TA=150°C 100 IR=100μA 350 IF=20mA 0.87 IF=100mA 1.0 IF=200mA 1.25 VR=0, f=1.0MHz 5.0 IR=IF=30mA, Irr=3.0mA, RL=100Ω 50 UNITS nA μA V V V V pF ns R1 (8-February 2010) CMSD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: B5D R1 (8-February 2010) w w w. c e n t r a l s e m i . c o m