CMSD6001A

CMSD6001 CMSD6001A CMSD6001C CMSD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD6001 SERIES are silicon switching diodes manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for switching applications requiring an extremely low leakage diode. SOT-323 CASE • Device is Halogen Free by design CMSD6001: CMSD6001A: CMSD6001C: CMSD6001S: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN-SERIES MARKING MARKING MARKING MARKING SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA CODE: CODE: CODE: CODE: 6C1 61A 61C 61S 75 100 250 250 4.0 1.0 275 -65 to +150 455 UNITS V V mA mA A A mW °C °C/W MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=75V 500 BVR IR=100μA 100 VF IF=1.0mA 0.85 VF IF=10mA 0.95 VF IF=100mA 1.1 CT VR=0, f=1.0MHz 2.0 trr IR=IF=10mA, Irr=1.0mA, RL=100Ω 3.0 UNITS pA V V V V pF μs R2 (8-February 2010) CMSD6001 CMSD6001A CMSD6001C CMSD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMSD6001 LEAD CODE: 1) Anode 2) NC 3) Cathode MARKING CODE: 6C1 CMSD6001A LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 MARKING CODE: 61A CMSD6001C LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 MARKING CODE: 61C CMSD6001S LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: 61S R2 (8-February 2010) w w w. c e n t r a l s e m i . c o m