CMSSH-3SE

CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini™ SILICON SCHOTTKY DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3E Series types are Enhanced Versions of the CMSSH-3 Series of Silicon Schottky Diodes in an SOT-323 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100 mA max to 200 mA max. SOT-323 CASE CMSSH-3E: CMSSH-3AE: CMSSH-3CE: CMSSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES ♦ ♦ BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. CODE: CODE: CODE: CODE: 31E 3AE 3CE 3SE UNITS V mA mA mA mW °C °C/W MARKING MARKING MARKING MARKING SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA MAXIMUM RATINGS: (TA=25°C) ♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 40 200 350 750 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL TEST CONDITIONS IR=100µA IF=2.0mA IF=15mA IF=100mA IF=200mA VR=25V VR=25V, TA=100°C VR=1.0V, f=1.0 MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω (TA=25°C unless otherwise noted) MIN 40 TYP 50 0.29 0.37 0.61 0.65 90 25 7.0 MAX UNITS V V V V V nA µA pF ns ♦BVR ♦VF ♦VF ♦♦VF VF 0.33 0.42 0.80 1.0 500 100 5.0 IR IR CT trr ♦ ♦♦ Enhanced specification. Additional Enhanced specification. R1 (4-February 2004) Central TM Semiconductor Corp. CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini™ SILICON SCHOTTKY DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION 2 1 2 1 2 1 2 1 D1 D2 D1 D2 D1 D2 3 3 3 3 CMSSH-3E 1) Anode 2) No Connection 3) Cathode MARKING CODE: 31E CMSSH-3AE 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 MARKING CODE: 3AE CMSSH-3CE 1) Anode D2 2) Anode D1 3) Cathode D1, D2 MARKING CODE: 3CE CMSSH-3SE 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: 3SE R1 (4-February 2004)