CMST5086

CMST5086

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMST5086 - SURFACE MOUNT PNP SILICON TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMST5086 数据手册
CMST5086 CMST5087 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST5086, CMST5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMST5086: 2PC CMST5087: 2QC SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 50 50 3.0 50 275 -65 to +150 455 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMST5086 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=10V 10 ICBO VCB=35V 50 BVCBO IC=100μA 50 BVCEO IC=1.0mA 50 BVEBO IE=100μA 3.0 VCE(SAT) IC=10mA, IB=1.0mA 0.30 VBE(SAT) IC=10mA, IB=1.0mA 0.85 hFE VCE=5.0V, IC=0.1mA 150 500 hFE VCE=5.0V, IC=1.0mA 150 hFE VCE=5.0V, IC=10mA 150 fT VCE=5.0V, IC=500μA, f=20MHz 40 Cob hfe NF NF VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=20mA, RS=10kΩ f=10Hz to 15.7kHz VCE=5.0V, IC=100μA, RS=3.0kΩ f=1.0kHz 150 4.0 600 3.0 3.0 CMST5087 MIN MAX 10 50 50 50 3.0 0.30 0.85 250 800 250 250 40 250 4.0 900 2.0 2.0 UNITS nA nA V V V V V MHz pF dB dB R3 (9-February 2010) CMST5086 CMST5087 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMST5086: 2PC CMST5087: 2QC R3 (9-February 2010) w w w. c e n t r a l s e m i . c o m
CMST5086
物料型号: - CMST5086 和 CMST5087

器件简介: - CENTRAL SEMICONDUCTOR CMST5086、CMST5087 是由外延平面工艺制造的PNP硅晶体管,采用SUPERmini™表面贴装封装,设计用于需要高增益和低噪声的应用。

引脚分配: - 引脚代码:1) 基极 2) 发射极 3) 集电极

参数特性: - 最大额定值(TA=25°C): - 集电极-基极电压(VCBO):50V - 集电极-发射极电压(VCEO):50V - 发射极-基极电压(VEBO):3.0V - 连续集电极电流(Ic):50mA - 功率耗散(PD):275mW - 工作和存储结温(TJTstg):-65至+150°C - 热阻(OJA):455°C/W

- 电气特性(TA=25°C,除非另有说明): - 集电极漏电流(ICBO):10nA至50nA - 击穿电压(BVCBO、BVCEO、BVEBO):50V - 饱和压降(VCE(SAT)):0.30V - 饱和压降(VBE(SAT)):0.85V - 电流增益(hFE):150至800 - 截止频率(fT):40MHz - 电容(Cob):4.0pF - 噪声系数(NF):2.0至3.0dB

功能详解: - 这些PNP硅晶体管适用于需要高增益和低噪声的应用。

应用信息: - 适用于需要高增益和低噪声的应用。

封装信息: - SOT-323封装,具体尺寸和机械轮廓在文档中有详细描述。
CMST5086 价格&库存

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