CMST5089

CMST5088 CMST5089 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST5088, CMST5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMST5088: 1QC CMST5089: 1RC SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMST5088 35 30 CMST5089 30 25 UNITS V V V mA mW °C °C/W 4.5 50 275 -65 to +150 455 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMST5088 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=20V 50 ICBO VCB=15V IEBO VEB=3.0V 50 IEBO VEB=4.5V BVCBO IC=100μA 35 BVCEO IC=1.0mA 30 BVEBO IE=100μA 4.5 VCE(SAT) IC=10mA, IB=1.0mA 0.5 VBE(SAT) IC=10mA, IB=1.0mA 0.8 hFE VCE=5.0V, IC=0.1mA 300 900 hFE VCE=5.0V, IC=1.0mA 350 hFE VCE=5.0V, IC=10mA 300 fT VCE=5.0V, IC=500μA, f=20MHz 50 Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 Cib VBE=0.5V, IC=0, f=1.0MHz 15 hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 350 1400 NF VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz 3.0 CMST5089 MIN MAX 50 100 30 25 4.5 0.5 0.8 400 1200 450 400 50 4.0 15 450 1800 2.0 UNITS nA nA nA nA V V V V V MHz pF pF dB R4 (9-February 2010) CMST5088 CMST5089 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMST5088: 1QC CMST5089: 1RC R4 (9-February 2010) w w w. c e n t r a l s e m i . c o m