CMUD6263AE

CMUD6263AE

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMUD6263AE - ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES - Central Semiconductor Co...

  • 详情介绍
  • 数据手册
  • 价格&库存
CMUD6263AE 数据手册
CMUD6263E CMUD6263AE CMUD6263CE CMUD6263SE w w w. c e n t r a l s e m i . c o m ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD6263E Series types are Enhanced High Voltage Silicon Schottky diodes, epoxy molded in an ULTRAmini™ SOT-523 surface mount package, designed for low current fast switching applications requiring a low forward voltage drop. ENHANCED SPECIFICATIONS: ♦ IF = 70mA (from 15mA) ♦ IFSM = 100mA (from 50mA) SOT-523 CASE The following configurations are available: CMUD6263E CMUD6263AE CMUD6263CE CMUD6263SE SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING MARKING MARKING MARKING SYMBOL VRRM IF IFSM PD TJ, Tstg ΘJA CODE: CODE: CODE: CODE: C63 C6A C6C C6S UNITS V mA mA mW °C °C/W MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage ♦ Continuous Forward Current ♦ Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 70 70 100 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C) SYMBOL TEST CONDITIONS MIN ♦ IR VR=50V BVR IR=10μA 70 ♦♦ VF IF=100µA ♦♦ VF IF=500µA ♦ VF IF=1.0mA ♦♦ VF IF=10mA ♦♦ VF IF=15mA CT VR=0, f=1.0MHz trr IR=IF=10mA, Irr=1.0mA, RL=100Ω ♦ Enhanced specification ♦♦ Additional Enhanced specification TYP 10 290 345 380 700 830 MAX 100 320 380 400 750 900 2.0 5.0 UNITS nA V mV mV mV mV mV pF ns R2 (9-February 2010) CMUD6263E CMUD6263AE CMUD6263CE CMUD6263SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) PIN CONFIGURATIONS CMUD6263E LEAD CODE: 1) Anode 2) No Connection 3) Cathode MARKING CODE: C63 CMUD6263EA LEAD CODE: 1) Cathode D1 2) Cathode D2 3) Anode D1, D2 MARKING CODE: C6A CMUD6263EC LEAD CODE: 1) Anode D1 2) Anode D2 3) Cathode D1, D2 MARKING CODE: C6C CMUD6263ES LEAD CODE: 1) Anode D1 2) Cathode D2 3) Anode D2, Cathode D1 MARKING CODE: 6CS R2 (9-February 2010) w w w. c e n t r a l s e m i . c o m
CMUD6263AE
物料型号: - CMUD6263E(单极) - CMUD6263AE(双极,共阳极) - CMUD6263CE(双极,共阴极) - CMUD6263SE(双极,串联)

器件简介: CENTRAL SEMICONDUCTOR生产的CMUD6263E系列是增强型高电压硅肖特基二极管,采用ULTRAmini™ SOT-523表面贴装封装,适用于需要低正向电压降的低电流快速开关应用。

引脚分配: - CMUD6263E(单极):1)阳极,2)无连接,3)阴极 - CMUD6263AE(双极,共阳极):1)阳极D1,2)阴极D2,3)阳极D1、D2 - CMUD6263CE(双极,共阴极):1)阳极D1,2)无连接,3)阴极D1、D2 - CMUD6263SE(双极,串联):1)阳极D1,2)阴极D2,3)阳极D2、阴极D1

参数特性: - 最大额定值: - 反向重复峰值电压(VRRM):70V - 连续正向电流(IF):70mA - 正向峰值浪涌电流(IFSM):100mA - 功率耗散(PD):250mW - 工作和存储结温(TJTstg):-65至+150°C - 热阻(OJA):500°C/W - 电气特性(Ta=25°C): - IR(VR=50V):10nA至100nA - BVR(IR=10μA):70V - VF(Ip=100μA):290mV至320mV - VF(Ip=500μA):345mV至380mV - VF(Ip=1.0mA):380mV至400mV - VF(Ip=10mA):700mV至750mV - VF(Ip=15mA):830mV至900mV - Ciss(VR=0,f=1.0MHz):2.0pF - t_r(IR=IF=10mA,I=1.0mA,R=100Ω):5.0ns

功能详解: 该系列二极管为增强型高电压硅肖特基二极管,具有低正向电压降和快速开关特性,适用于低电流应用。

应用信息: 适用于需要低正向电压降和快速开关的应用场合。

封装信息: 采用ULTRAmini™ SOT-523表面贴装封装。
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