CMUDM7004

CMUDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: 74C SOT-523 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices MAXIMUM RATING: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature FEATURES: • ESD Protection up to 2kV • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-523 Surface Mount Package • Complimentary P-Channel MOSFET: CMUDM8004 SYMBOL VDS VGS ID PD TJ, Tstg UNITS V V mA mW °C 30 8.0 450 250 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS(th) VSD rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss ton toff VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=0, IS=400mA VGS=4.5V, ID=200mA VGS=2.5V, VGS=1.8V, ID=100mA ID=75mA 200 30 0.5 0.5 TYP MAX 3.0 1.0 1.0 1.1 UNITS μA μA V V V mΩ mΩ mΩ mS pF pF pF ns ns 280 390 550 5.0 43 8.0 20 75 460 560 730 VDS=10V, ID=100mA VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω R0 (17-June 2010) CMUDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-523 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 74C R0 (17-June 2010) w w w. c e n t r a l s e m i . c o m