CMUDM8001

CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: C8A SOT-523 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature FEATURES: • • • • • • Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR IDSS BVDSS VGS(th) rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss ton toff VGS=10V, VDS=0 VDS=20V, VGS=0 VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=4.0V, ID=10mA VGS=2.5V, ID=10mA VGS=1.5V, ID=1.0mA VDS=10V, ID=100mA VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VDD=3.0V, VGS=2.5V, VGS=2.5V, ID=10mA ID=10mA 100 15 45 15 35 80 20 0.6 MAX 1.0 1.0 1.1 8.0 12 45 UNITS μA μA V V Ω Ω Ω mS pF pF pF ns ns R1 (9-February 2010) CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C8A R1 (9-February 2010) w w w. c e n t r a l s e m i . c o m