CMUDM8004

CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8004 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: 84C SOT-523 CASE • Devices are Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices MAXIMUM RATING: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature FEATURES: • ESD Protection up to 2kV • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-523 Surface Mount Package • Complimentary N-Channel MOSFET: CMUDM7004 SYMBOL VDS VGS ID PD TJ, Tstg UNITS V V mA mW °C 30 8.0 450 250 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS BVDSS VGS(th) VSD rDS(ON) rDS(ON) rDS(ON) Qg(tot) Qgs Qgd gFS Crss Ciss Coss VDS=30V, VGS=0 VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=0, IS=100mA VGS=4.5V, ID=430mA VGS=2.5V, ID=200mA VGS=1.8V, ID=100mA VDS=10V, VGS=4.5V, ID=1.0A VDS=10V, VGS=4.5V, ID=1.0A VDS=10V, VGS=4.5V, ID=1.0A VDS =10V, ID=100mA VDS=25V, VGS=0, f=1.0MHz VDS=25V, VDS=25V, VGS=0, f=1.0MHz VGS=0, f=1.0MHz 200 0.880 0.384 0.128 30 0.5 MAX 3.0 1.0 1.0 1.1 1.1 2.0 3.3 UNITS μA μA V V V Ω Ω Ω nC nC nC mS 10 55 15 pF pF pF R1 (7-December 2010) CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-523 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 84C R1 (7-December 2010) w w w. c e n t r a l s e m i . c o m