CMUT2907A

CMUT2907A ULTRAmini™ SURFACE MOUNT PNP SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications. Marking Code is FC2. UNITS V V V mA mW °C °C/W 60 60 5.0 600 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V 10 nA ICBO VCB=50V, TA=125°C 10 µA ICEV VCE=30V, VBE=0.5V 50 nA BVCBO IC=10µA 60 V BVCEO IC=10mA 60 V BVEBO IE=10µA 5.0 V VCE(SAT) IC=150mA, IB=15mA 0.4 V VCE(SAT) IC=500mA, IB=50mA 1.6 V VBE(SAT) IC=150mA, IB=15mA 1.3 V VBE(SAT) IC=500mA, IB=50mA 2.6 V hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 50 R0 ( 30-May 2001) Central SYMBOL fT Cob Cib ton td tr toff ts tf TM Semiconductor Corp. TEST CONDITIONS CMUT2907A ULTRAmini™ SURFACE MOUNT PNP SILICON TRANSISTOR MIN 200 8.0 30 45 10 40 100 80 30 MAX UNITS MHz pF pF ns ns ns ns ns ns ELECTRICAL CHARACTERISTICS: Continued VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MECHANICAL OUTLINE - SOT-523 BOTTOM VIEW E F A B C G 1 2 H D 3 I R1 LEAD CODE: 1) Base 2) Emitter 3) Collector R0 ( 30-May 2001)