CMUT2907A_10

CMUT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: FC2 SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 60 5.0 600 250 -65 to +150°C 500 °C/W UNITS V V V mA mW ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125°C VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA 75 100 100 100 50 300 60 60 5.0 0.4 1.6 1.3 2.6 MIN MAX 10 10 50 UNITS nA µA nA V V V V V V V R3 (9-February 2010) CMUT2907A SURFACE MOUNT PNP SILICON TRANSISTOR SYMBOL fT Cob Cib ton td tr toff ts tf ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, VCC=6.0V, IC=150mA, VCC=6.0V, IC=150mA, IB1=15mA IB1=15mA IB1=15mA 200 MAX 8.0 30 45 10 40 100 80 30 UNITS MHz pF pF ns ns ns ns ns ns IB1=IB2=15mA IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: FC2 R3 (9-February 2010) w w w. c e n t r a l s e m i . c o m