CMUT5087E

CMUT5087E

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMUT5087E - ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS - Centr...

  • 详情介绍
  • 数据手册
  • 价格&库存
CMUT5087E 数据手册
CMUT5087E PNP CMUT5088E NPN ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini™ COMPLEMENTARY SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5087E, and CMUT5088E, are Silicon transistors in an ULTRAmini™ surface mount package with enhanced specifications designed for applications requiring high gain and low noise. MARKING CODES: CMUT5087E PNP CMUT5088E NPN SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA SOT-523 CASE MARKING CODE: U87 MARKING CODE: U88 UNITS V V V mA mW C C/W o ♦ Collector-Base Voltage ♦Collector-Emitter Voltage ♦Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25oC) 50 50 5.0 100 350 -65 to +150 357 o ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO TEST CONDITIONS VCB=20V VEB=3.0V IC=100µA IC=1.0mA IE=100µA IC=10mA, IB=1.0mA IC=100mA, IB=10mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz 350 VCE=5.0V, IC=100µA, RS=10kΩ f=10Hz to 15.7kHz 50 50 5.0 135 65 8.7 45 110 700 300 300 300 50 100 4.0 15 1400 3.0 dB 430 435 430 125 150 105 7.5 50 225 700 390 380 350 75 MHz pF pF 100 400 800 900 MIN NPN TYP PNP MAX 50 50 UNITS nA nA V V V mV mV mV ♦BVCBO ♦BVCEO ♦ BVEBO ♦VCE(SAT) ♦♦ VCE(SAT) ♦ hFE hFE VBE(SAT) ♦hFE ♦♦ hFE ♦ fT Cob Cib hfe NF ♦ ♦♦ Enhanced specification. Additional Enhanced specification. R1 (12-February 2003) Central TM CMUT5087E PNP CMUT5088E NPN ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini™ COMPLEMENTARY SILICON TRANSISTORS Semiconductor Corp. SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: CMUT5087E: U87 CMUT5088E: U88 R1 (12-February 2003)
CMUT5087E
1. 物料型号: - CMUT5087E:PNP型硅晶体管 - CMUT5088E:NPN型硅晶体管 - 两者均属于CentralSemiconductor Corp.生产的ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini™ COMPLEMENTARY SILICON TRANSISTORS系列。

2. 器件简介: - CMUT5087E和CMUT5088E是硅晶体管,采用ULTRAmini™表面贴装封装,具有增强规格,专为需要高增益和低噪声的应用而设计。

3. 引脚分配: - 引脚1:基极(BASE) - 引脚2:发射极(EMITTER) - 引脚3:集电极(COLLECTOR)

4. 参数特性: - 最大额定值: - 集电极-基极电压(VCBO):50V - 集电极-发射极电压(VCEO):50V - 发射极-基极电压(VEBO):5.0V - 集电极电流(IC):100mA - 功率耗散:350mW - 工作和存储结温:-65至+150°C - 热阻(TJ,Tstg):357°C/W

5. 功能详解: - 电气特性(TA=25°C): - 集电极电流(ICBO)在VCB=20V时,最小值为50nA。 - 发射极电流(IEBO)在VEB=3.0V时,最小值为50nA。 - 击穿电压(BVCBO、BVCEO、BVEBO)未提供具体数值。 - 饱和压降(VCE(SAT))在IC=10mA, IB=1.0mA时,最小值为45mV,最大值为100mV。 - 截止频率(fT)和最大频率(hFE)在不同条件下有具体数值。

6. 应用信息: - 这些晶体管适用于需要高增益和低噪声的应用,例如音频放大器、无线通信设备等。

7. 封装信息: - 封装类型为SOT-523,提供了详细的机械尺寸图和尺寸参数,包括英寸和毫米单位。
CMUT5087E 价格&库存

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