CMUT5179_10

CMUT5179_10

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMUT5179_10 - SURFACE MOUNT NPN SILICON RF TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMUT5179_10 数据手册
CMUT5179 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. MARKING CODE: HC7 SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 20 15 2.5 50 250 -65 to +150 500 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE fT Ccb hfe Gpe NF VCB=15V IC=10μA IC=3.0mA IE=10μA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=1.0V, IC=3.0mA VCE=6.0V, IC=5.0mA, f=100MHz VCB=10V, IE=0, f=0.1 to 1.0MHz VCE=6.0V, IC=2.0, f=1.0kHz VCE=6.0V, IC=5.0mA, f=200MHz VCE=6.0V, IC=1.5mA, RS=50Ω, f=200MHz 20 15 2.5 TYP MAX 20 UNITS nA V V V 0.4 1.0 25 900 25 15 4.5 1450 1.0 V V MHz pF dB dB R2 (9-February 2010) CMUT5179 SURFACE MOUNT NPN SILICON RF TRANSISTOR SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: HC7 R2 (9-February 2010) w w w. c e n t r a l s e m i . c o m
CMUT5179_10
1. 物料型号: - CMUT5179

2. 器件简介: - CENTRAL SEMICONDUCTOR CMUT5179是一种NPN硅射频晶体管,采用外延平面工艺制造,环氧树脂模塑在ULTRAmini™表面贴装封装中,设计用于低噪声、高频放大器和高输出振荡器应用。

3. 引脚分配: - 1) Base(基极) - 2) Emitter(发射极) - 3) Collector(集电极)

4. 参数特性: - 最大额定值(TA=25°C): - 集电极-基极电压(VCBO):20V - 集电极-发射极电压(VCEO):15V - 发射极-基极电压(VEBO):2.5V - 连续集电极电流(Ic ch):50mA - 功率耗散(PD):250mW - 工作和存储结温(TJ.Tstg):-65至+150°C - 热阻(OJA):500°C/W - 电气特性(TA=25°C,除非另有说明): - 集电极饱和电流(ICBO):20nA - 集电极-基极击穿电压(BVCBO):20V - 集电极-发射极击穿电压(BVCEO):15V - 发射极-基极击穿电压(BVEBO):2.5V - 饱和压降(VCE(SAT)):0.4V - 饱和压降(VBE(SAT)):1.0V - 直流电流增益(hFE):25至1450,取决于VCE和Ic - 截止频率(ft):900至1450MHz,取决于VCE和Ic - 集电极-基极电容(Ccb):1.0pF - 功率增益(Gpe):15dB - 噪声系数(NF):4.5dB

5. 功能详解: - CMUT5179是一种用于高频应用的NPN硅射频晶体管,具有低噪声和高增益特性,适用于高频放大器和高输出振荡器。

6. 应用信息: - 适用于低噪声、高频放大器和高输出振荡器应用。

7. 封装信息: - SOT-523封装,也称为ULTRAmini™表面贴装封装。
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