CMXD2004_10

CMXD2004_10

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMXD2004_10 - SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES - Central Semicond...

  • 详情介绍
  • 数据手册
  • 价格&库存
CMXD2004_10 数据手册
CMXD2004 SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three (3) Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high voltage capability. MARKING CODE: X04 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 240 300 200 225 625 4.0 1.0 350 -65 to +150 357 UNITS V V mA mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR BVR VF CT trr VR=240V VR=240V, TA=150°C IR=100μA IF=100mA VR=0, f=1.0MHz IF=IR=30mA, Irr=3.0mA, RL=100Ω 300 1.0 5.0 50 100 100 UNIT nA μA V V pF ns R4 (9-February 2010) CMXD2004 SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X04 R4 (9-February 2010) w w w. c e n t r a l s e m i . c o m
CMXD2004_10
物料型号: - 型号为CMXD2004。

器件简介: - CMXD2004是由Central Semiconductor生产的表面贴装三隔离高电压硅开关二极管,采用外延平面工艺制造,环氧树脂模塑在SUPERmini™表面贴装封装中,适用于需要高电压能力的场合。

引脚分配: - 引脚1:D1阳极(Anode D1) - 引脚2:D2阳极(Anode D2) - 引脚3:D3阳极(Anode D3) - 引脚4:D3阴极(Cathode D3) - 引脚5:D2阴极(Cathode D2) - 引脚6:D1阴极(Cathode D1)

参数特性: - 最大反向连续电压(VR):240V - 峰值重复反向电压(VRRM):300V - 平均正向电流(Io):200mA - 正向连续电流(IF):225mA - 峰值重复正向电流(IFRM):625mA - 峰值正向浪涌电流(IFSM,tp=1.0us):4.0A - 峰值正向浪涌电流(IFSM,tp=1.0s):1.0A - 功率耗散(PD):350mW - 工作和存储结温(TJTstg):-65至+150°C - 热阻(JA):357°C/W

功能详解: - 每个二极管在25°C下电气特性如下: - 反向电流(IR):在240V下小于100nA - 反向电压(BVR):在100nA下为300V - 正向电压(VF):在100mA下小于1.0V - 电容(CT):在0V和1.0MHz下小于5.0pF - 反向恢复时间(trr):在IF=30mA, Ir=3.0mA, RL=100Ω下为50ns

应用信息: - 适用于需要高电压能力的场合,具体应用未在文档中详述。

封装信息: - 封装类型为SOT-26,具体尺寸如下: - A:0.11-0.19英寸(2.81-4.83毫米) - B:0.40英寸(10.16毫米) - C:0.10英寸(2.54毫米) - D:1.00-1.20英寸(25.40-30.48毫米) - E:1.88-1.92英寸(47.75-48.83毫米) - F:0.93-0.97英寸(23.62-24.64毫米) - G:2.60-3.00英寸(66.04-76.20毫米) - H:1.50-1.70英寸(38.10-43.18毫米) - J:2.80-3.00英寸(71.12-76.20毫米)
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