CMXD6001_10

CMXD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three (3) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for switching applications requiring extremely low leakage. MARKING CODE: X01 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 75 100 250 250 4.0 1.0 350 -65 to +150 357 UNITS V V mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR BVR VF VF VF CT trr TEST CONDITIONS VR=75V IR=100μA IF=1.0mA IF=10mA IF=100mA VR=0, f=1.0MHz IR=IF=10mA, Irr=1.0mA, RL=100Ω MIN 100 0.85 0.95 1.1 2.0 3.0 MAX 500 UNITS pA V V V V pF μs R3 (12-February 2010) CMXD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X01 R3 (12-February 2010) w w w. c e n t r a l s e m i . c o m