CMXT2222A_10

CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for small signal general purpose and switching applications. MARKING CODE: X1P SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE fT Cob Cib hie hie SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 75 40 6.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VCB=60V 10 VCB=60V, TA=125°C 10 VCE=60V, VEB=3.0V 10 VEB=3.0V 10 IC=10μA 75 IC=10mA 40 IE=10μA 6.0 IC=150mA, IB=15mA 0.3 IC=500mA, IB=50mA 1.0 IC=150mA, IB=15mA 0.6 1.2 IC=500mA, IB=50mA 2.0 VCE=10V, IC=0.1mA 35 VCE=10V, IC=1.0mA 50 VCE=10V, IC=10mA 75 VCE=10V, IC=150mA 100 300 VCE=1.0V, IC=150mA 50 VCE=10V, IC=500mA 40 VCE=20V, IC=20mA, f=100MHz 300 VCB=10V, IE=0, f=1.0MHz 8.0 VEB=0.5V, IC=0, f=1.0MHz 25 VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 UNITS nA μA nA nA V V V V V V V MHz pF pF kΩ kΩ R3 (12-February 2010) CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTORS ELECTRICAL SYMBOL hre hre hfe hfe hoe hoe rb’Cc NF td tr ts tf CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX UNITS VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10-4 VCE=10V, IC=10mA, f=1.0kHz 4.0 x10-4 VCE=10V, IC=1.0mA, f=1.0kHz 50 300 VCE=10V, IC=10mA, f=1.0kHz 75 375 VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 μS VCE=10V, IC=10mA, f=1.0kHz 25 200 μS VCB=10V, IE=20mA, f=31.8MHz 150 ps VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz 4.0 dB VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 ns VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns SOT-26 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X1P R3 (12-February 2010) w w w. c e n t r a l s e m i . c o m