CP127-2N6301-CT5

CP127-2N6301 NPN - Darlington Transistor Die 8.0 Amp, 80 Volt w w w. c e n t r a l s e m i . c o m The CP127-2N6301 is a silicon NPN Darlington power transistor designed for high gain amplifier applications. MECHANICAL SPECIFICATIONS: Die Size 110 x 110 MILS Die Thickness 10.6 MILS Base Bonding Pad Size 21 x 24 MILS Emitter Bonding Pad Size 24 x 42 MILS Top Side Metalization Al – 20,000Å Back Side Metalization Ni/Ag – 2,000Å/10,000Å Scribe Alley Width 4.3 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 700 MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Operating and Storage Junction Temperature SYMBOL VCBO VCEO 80 V VEBO IC 5.0 V 8.0 A TJ, Tstg -65 to +200 °C MAX 0.5 UNITS mA 5.0 mA 0.5 mA 2.0 mA ELECTRICAL SYMBOL ICEV ICEV CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=80V, VBE=1.5V VCE=80V, VBE=1.5V, TC=150°C ICEO VCE=40V IEBO VEB=5.0V BVCEO VCE(SAT) IC=100mA VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hfe fT Cob UNITS V 80 80 V IC=4.0A, IB=16mA IC=8.0A, IB=80mA 2.0 V 3.0 V IC=8.0A, IB=80mA VCE=3.0V, IC=4.0A 4.0 V 2.8 V VCE=3.0V, IC=4.0A VCE=3.0V, IC=8.0A 750 VCE=3.0V, IC=3.0A, f=1.0kHz VCE=3.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=100kHz 300 18K 100 4.0 MHz 200 pF R1 (3-February 2016) CP127-2N6301 Typical Electrical Characteristics w w w. c e n t r a l s e m i . c o m R1 (3-February 2016) BARE DIE PACKING OPTIONS BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: S  ingulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) UNSAWN WAFER WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: F  ull wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs R2 (3-April 2017) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)