PROCESS
Power Transistor
CP176
Central Central
TM
NPN - Amp/Switch Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 240 PRINCIPAL DEVICE TYPES MJ15003 MULTI EPITAXIAL PLANAR 203 x 227 MILS 12.5 ± 1.0 MILS 38 x 76 MILS 47 x 72 MILS Al - 50,000Å Ag - 10,000Å
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (1 -August 2002)
Central
TM
PROCESS
CP176
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (1 -August 2002)
很抱歉,暂时无法提供与“CP176”相匹配的价格&库存,您可以联系我们找货
免费人工找货